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IRF7105 Datasheet(PDF) 2 Page - International Rectifier |
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IRF7105 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF7105 2 www.irf.com V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Total GateCharge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Parameter Min. Typ. Max. Units Conditions N-Ch 25 VGS = 0V, ID = 250µA P-Ch -25 VGS = 0V, ID = -250µA N-Ch 0.030 Reference to 25°C, ID = 1mA P-Ch -0.015 Reference to 25°C, ID = -1mA 0.083 0.10 VGS = 10V, ID = 1.0A 0.14 0.16 VGS = 4.5V, ID = 0.50A 0.16 0.25 VGS = -10V, ID = -1.0A 0.30 0.40 VGS = -4.5V, ID = -0.50A N-Ch 1.0 3.0 VDS = VGS, ID = 250µA P-Ch -1.0 -3.0 VDS = VGS, ID = -250µA N-Ch 4.3 VDS = 15V, ID = 3.5A P-Ch 3.1 VDS = -15V, ID = -3.5A N-Ch 2.0 VDS = 20V, VGS = 0V P-Ch -2.0 VDS = -20V, VGS = 0V, N-Ch 25 VDS = 20V, VGS = 0V, TJ = 55°C P-Ch -25 VDS = -20V, VGS = 0V, TJ = 55°C IGSS Gate-to-Source Forward Leakage N-P ±100 VGS = ± 20V N-Ch 9.4 27 P-Ch 10 25 N-Ch 1.7 P-Ch 1.9 N-Ch 3.1 P-Ch 2.8 N-Ch 7.0 20 P-Ch 12 40 N-Ch 9.0 20 P-Ch 13 40 N-Ch 45 90 P-Ch 45 90 N-Ch 25 50 P-Ch 37 50 LD Internal Drain Inductace N-P 4.0 Between lead , 6mm (0.25in.)from LS Internal Source Inductance N-P 6.0 package and center of die contact N-Ch 330 P-Ch 290 N-Ch 250 P-Ch 210 N-Ch 61 P-Ch 67 Parameter Min. Typ. Max. Units Conditions N-Ch 2.0 P-Ch -2.0 N-Ch 14 P-Ch -9.2 N-Ch 1.2 TJ = 25°C, IS = 1.3A, VGS = 0V P-Ch -1.2 TJ = 25°C, IS = -1.3A, VGS = 0V N-Ch 36 54 P-Ch 69 100 N-Ch 41 75 P-Ch 90 180 ton Forward Turn-On Time N-P Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300µs; duty cycle ≤ 2%. Notes: Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Source-Drain Ratings and Characteristics V V/°C Ω V S µA nC ns nH pF N-Channel ID = 2.3A, VDS = 12.5V, VGS = 10V P-Channel ID = -2.3A, VDS = -12.5V, VGS = -10V N-Channel VDD = 25V, ID = 1.0A, RG = 6.0Ω, RD = 25Ω P-Channel VDD = -25V, ID = -1.0A, RG = 6.0Ω, RD = 25Ω N-Channel VGS = 0V, VDS = 15V, = 1.0MHz P-Channel VGS = 0V, VDS = -15V, = 1.0MHz N-Ch P-Ch IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A V ns nC N-Channel TJ = 25°C, IF = 1.3A, di/dt = 100A/µs P-Channel TJ = 25°C, IF = -1.3A, di/dt = 100A/µs Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD) N-Channel I SD ≤ 3.5A, di/dt ≤ 90A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -2.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Surface mounted on FR-4 board, t ≤ 10sec. |
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