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ISL8105BCRZ Datasheet(PDF) 8 Page - Intersil Corporation |
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ISL8105BCRZ Datasheet(HTML) 8 Page - Intersil Corporation |
8 / 16 page 8 FN6447.0 February 13, 2007 The overcurrent function will trip at a peak inductor current (IPEAK) determined by: where IBSOC is the internal BSOC current source (21.5µA typical). The scale factor of 2 doubles the trip point of the MOSFET voltage drop, compared to the setting on the RBSOC resistor. The OC trip point varies in a system mainly due to the MOSFET's rDS(ON) variations (over process, current and temperature). To avoid overcurrent tripping in the normal operating load range, find the RBSOC resistor from Equation 1 with: 1. The maximum rDS(ON) at the highest junction temperature 2. The minimum IBSOC from the specification table 3. Determine IPEAK for IPEAK > IOUT(MAX) + , where is the output inductor ripple current. For an equation for the ripple current, see “Output Inductor Selection” on page 12. The range of allowable voltages detected (2 * IBSOC *RBSOC) is 0mV to 475mV; but the practical range for typical MOSFETs is typically in the 20mV to 120mV ballpark (500 Ω to 3000Ω). If the voltage drop across RBSOC is set too low, that can cause almost continuous OCP tripping and retry. It would also be very sensitive to system noise and inrush current spikes, so it should be avoided. The maximum usable setting is around 0.2V across RBSOC (0.4V across the MOSFET); values above that might disable the protection. Any voltage drop across RBSOC that is greater than 0.3V (0.6V MOSFET trip point) will disable the OCP. The preferred method to disable OCP is simply to remove the resistor, which will be detected as no OCP. Note that conditions during power-up or during a retry may look different than normal operation. During power-up in a 12V system, the IC starts operation just above 4V; if the supply ramp is slow, the soft-start ramp might be over well before 12V is reached. So with bottom-side gate drive voltages, the rDS(ON) of the MOSFETs will be higher during power-up, effectively lowering the OCP trip. In addition, the ripple current will likely be different at lower input voltage. Another factor is the digital nature of the soft-start ramp. On each discrete voltage step, there is in effect a small load transient, and a current spike to charge the output capacitors. The height of the current spike is not controlled; it is affected by the step size of the output, the value of the output capacitors, as well as the IC error amp compensation. So it is possible to trip the overcurrent with inrush current, in addition to the normal load and ripple considerations. Figure 5 shows the output response during a retry of an output shorted to GND. At time T0, the output has been turned off, due to sensing an overcurrent condition. There are two internal soft-start delay cycles (T1 and T2) to allow the MOSFETs to cool down, to keep the average power dissipation in retry at an acceptable level. At time T2, the output starts a normal soft-start cycle, and the output tries to ramp. If the short is still applied, and the current reaches the BSOC trip point any time during soft-start ramp period, the output will shut off and return to time T0 for another delay cycle. The retry period is thus two dummy soft-start cycles FIGURE 4. BGATE PULSE STRETCHING BGATE > 425ns BGATE = 425ns BGATE < 425ns BGATE << 425ns BGATE = 425ns BGATE < 425ns BGATE < 425ns BGATE > 425ns I PEAK 2I BSOC × R BSOC × r DS ON () ------------------------------------------------------ = (EQ. 1) ΔI () 2 ---------- ΔI VOUT FIGURE 5. OVERCURRENT RETRY OPERATION 2 SOFT-START CYCLES T0 T1 T2 ISL8105B |
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