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ISL6296A Datasheet(PDF) 3 Page - Intersil Corporation |
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ISL6296A Datasheet(HTML) 3 Page - Intersil Corporation |
3 / 20 page 3 FN6567.3 April 15, 2010 Absolute Maximum Ratings (Reference to GND) Thermal Information Supply Voltage (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V All Other Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to VDD + 0.5V Recommended Operating Conditions Ambient Temperature Range . . . . . . . . . . . . . . . . . . .-25°C to +85°C Thermal Resistance (Typical) θJA (°C/W) θJC (°C/W) SOT-23 Package (Note 1) . . . . . . . . . . 200 N/A 2x3 TDFN Package (Notes 2, 3) . . . . . 70 10.5 Maximum Junction Temperature (Plastic Package) . . . . . . . +125°C Maximum Storage Temperature Range . . . . . . . . . .-40°C to +125°C Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 2. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech Brief TB379. 3. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside. Electrical Specifications Unless otherwise noted, all parameters are established over the operational supply voltage and temperature range of the device as follows: TA = -25°C to +85°C; VDD = 2.6V to 4.8V; Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS DC CHARACTERISTICS Supply Voltage VDD During normal operation 2.6 - 4.8 V During OTP ROM programming 2.8 - 4.8 V Run Mode Supply Current (Exclude I/O Current) IDD VDD = 4.2V - 38 55 µA VDD = 4.8V - 40 65 µA Sleep Mode Supply Current IDDS VDD = 4.2V, XSD pin floating - 0.15 0.5 µA OTP Programming Mode Supply Current IDDP For ~ 1.8ms duration per write operation - 250 500 µA Internal Regulated Supply Voltage VRG Observable only in test mode 2.3 2.5 2.7 V Internal OTP ROM Programming Voltage VPP Observable only in test mode 11 12 13 V POR Release Threshold VPOR+ 1.9 2.2 2.4 V POR Assertion Threshold VPOR- 1.5 1.8 2.1 V XSD PIN CHARACTERISTICS XSD Input Low Voltage VIL -0.4 - 0.5 V XSD Input High Voltage VIH 1.5 - VDD + 0.4V V XSD Input Hysteresis VHYS -400 - mV XSD Internal Pull-Down Current IPD VDD = 2.6V - 0.8 - µA VDD = 4.2V - 1.2 2.0 µA VDD = 4.8V - 1.8 2.5 µA XSD Output Low Voltage VOL IOL = 1mA - - 0.4 V XSD Input Transition Time tX 10% to 90% transition time - - 2 µs XSD Output Fall Time tF 90% to 10%, CLOAD = 12pF - - 50 ns XSD Pin Capacitance CPIN -6 - pF ISL6296A |
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