3

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FN6411.1

July 7, 2008

Functional Diagram

Die Characteristics

DIE DIMENSIONS:

2690µm x 5200µm (106 milsx205 mils)

Thickness: 483µm

± 25.4µm (19 mils ± 1 mil)

INTERFACE MATERIALS:

Glassivation:

Type: PSG (Phosphorous Silicon Glass)

Thickness: 8.0kÅ

± 1.0kÅ

Top Metallization:

Type: AlSiCu

Thickness: 16.0kÅ

± 2kÅ

Substrate:

Radiation Hardened Silicon Gate,

Dielectric Isolation

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased (DI)

ADDITIONAL INFORMATION:

Worst Case Current Density:

Transistor Count:

196

Metallization Mask Layout

HS-303ARH, HS-303BRH

N

P

IN

D

TRUTH TABLE

LOGIC

SW1 AND SW2

SW3 AND SW4

0OFF

ON

1ON

OFF

GND

V-

V+

HS-303ARH, HS-303BRH