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LM5109A Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LM5109A Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 9 page  Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. V DD to VSS -0.3V to 18V HB to HS −0.3V to 18V LI or HI to V SS −0.3V to V DD +0.3V LO to V SS −0.3V to V DD +0.3V HO to V SS V HS −0.3V to VHB +0.3V HS to V SS (Note 6) −5V to 90V HB to V SS 108V Junction Temperature -40˚C to +150˚C Storage Temperature Range −55˚C to +150˚C ESD Rating HBM (Note 2) 1.5 kV Recommended Operating Conditions V DD 8V to 14V HS (Note 6) −1V to 90V HB V HS +8V to VHS +14V HS Slew Rate < 50 V/ns Junction Temperature −40˚C to +125˚C Electrical Characteristics Specifications in standard typeface are for T J = +25˚C, and those in boldface type apply over the full operating junction tem- perature range. Unless otherwise specified, V DD =VHB = 12V, VSS =VHS = 0V, No Load on LO or HO (Note 4). Symbol Parameter Conditions Min Typ Max Units SUPPLY CURRENTS I DD V DD Quiescent Current LI = HI = 0V 0.3 0.6 mA I DDO V DD Operating Current f = 500 kHz 1.8 2.9 mA I HB Total HB Quiescent Current LI = HI = 0V 0.06 0.2 mA I HBO Total HB Operating Current f = 500 kHz 1.4 2.8 mA I HBS HB to V SS Current, Quiescent V HS =VHB = 90V 0.1 10 µA I HBSO HB to V SS Current, Operating f = 500 kHz 0.5 mA INPUT PINS LI and HI V IL Low Level Input Voltage Threshold 0.8 1.8 V V IH High Level Input Voltage Threshold 1.8 2.2 V R I Input Pulldown Resistance 100 200 500 k Ω UNDER VOLTAGE PROTECTION V DDR V DD Rising Threshold V DDR =VDD -VSS 6.0 6.7 7.4 V V DDH V DD Threshold Hysteresis 0.5 V V HBR HB Rising Threshold V HBR =VHB -VHS 5.7 6.6 7.1 V V HBH HB Threshold Hysteresis 0.4 V LO GATE DRIVER V OLL Low-Level Output Voltage I LO = 100 mA V OHL =VLO –VSS 0.38 0.65 V V OHL High-Level Output Voltage I LO = −100 mA, V OHL =VDD–VLO 0.72 1.20 V I OHL Peak Pullup Current V LO = 0V 1.0 A I OLL Peak Pulldown Current V LO = 12V 1.0 A HO GATE DRIVER V OLH Low-Level Output Voltage I HO = 100 mA V OLH =VHO–VHS 0.38 0.65 V V OHH High-Level Output Voltage I HO = −100 mA V OHH =VHB–VHO 0.72 1.20 V I OHH Peak Pullup Current V HO = 0V 1.0 A I OLH Peak Pulldown Current V HO = 12V 1.0 A THERMAL RESISTANCE θ JA Junction to Ambient SOIC-8 (Note 3), (Note 5) 160 ˚C/W LLP-8 (Note 3), (Note 5) 40 www.national.com 3 |
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