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BUK7509-75A Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK7509-75A Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 15 page Philips Semiconductors BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET Product specification Rev. 02 — 06 November 2000 7 of 15 9397 750 07655 © Philips Electronics N.V. 2000. All rights reserved. ID = 1 mA; VDS =VGS Tj =25 °C; VDS =VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. Tj =25 °C; VDS =25V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03aa32 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -60 -20 20 60 100 140 180 V GS(th) T j ( o C) (V) max. typ. min 03aa35 10-6 10-5 10-4 10-3 10-2 10-1 01 23 45 max typ min V GS (V) ID (A) 03nb48 10 20 30 40 50 60 70 80 0 2040 6080 ID (A) gfs (S) 03nb53 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 10 100 VDS (V) C (pF) Crss Coss Ciss |
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