BUK7606-55A datasheet(6/15 Pages) NXP

Part #	BUK7606-55A

Description	TrenchMOS standard level FET

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Manufacturer	NXP [NXP Semiconductors]

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Philips Semiconductors

BUK7506-55A; BUK7606-55A

TrenchMOS™ standard level FET

Product data

Rev. 02 — 03 July 2001

6 of 15

9397 750 08421

Source-drain diode

VSD

source-drain (diode forward)

voltage

IS = 30 A; VGS =0V;

Figure 15

−

0.85

1.2

V

trr

reverse recovery time

IS =20A; dIS/dt = −100 A/µs

VGS = −10 V; VDS =30V

−

80

−

ns

Qr

recovered charge

−

200

−

nC

Table 5:

Characteristics…continued

Tj =25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Tj =25 °C; tp = 300 µsTj =25 °C; ID =25A

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Drain-source on-state resistance as a function

of gate-source voltage; typical values.

Tj =25 °C

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature.

03nf29

0

50

100

150

200

250

300

350

400

02468

10

VDS (V)

ID

(A)

4.5

5.5

6.5

7.5

8.5

20

14

12

10

9

VGS (V) =

03nf28

4

4.5

5

5.5

6

6.5

7

7.5

8

8.5

5

101520

VGS (V)

RDSon

(m

Ω)

03nf30

0

2

4

6

8

10

12

0

20

40

60

80

100

120

ID (A)

RDSon

(m

Ω)

5.5

6

6.5

7

8

10

VGS (V) =

03ne89

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

-60

-20

20

60

100

140

180

Tj (

oC)

a

R

DSon

R

DSon 25 C

°

()

----------------------------

=

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