Philips Semiconductors

BUK95/96/9E3R2-40B

TrenchMOS™ logic level FET

Product data

Rev. 04 — 14 November 2003

4 of 16

9397 750 12049

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

5.

Thermal characteristics

5.1 Transient thermal impedance

Table 4:

Thermal characteristics

Symbol Parameter

Conditions

Min

Typ

Max Unit

base

Figure 4

-

-

0.5

K/W

thermal resistance from junction to ambient

SOT78 (TO-220AB)

vertical in still air

-

60

-

K/W

minimum footprint; mounted on a

printed-circuit board

-

50

-

K/W

vertical in still air

-

60

-

K/W

Fig 4.

Transient thermal impedance from junction to mounting base as a function of pulse duration.

03nh37

single shot

0.2

0.1

0.05

0.02

10-3

10-2

10-1

1

10-6

10-5

10-4

10-3

10-2

10-1

1

tp (s)

Zth(j-mb)

(K/W)

δ = 0.5

tp

tp

T

P

t

T

δ =