Philips Semiconductors

BUK95/96/9E3R2-40B

TrenchMOS™ logic level FET

Product data

Rev. 04 — 14 November 2003

8 of 16

9397 750 12049

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Fig 9.

Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

Fig 11. Forward transconductance as a function of

drain current; typical values.

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

03ng52

0.0

0.5

1.0

1.5

2.0

2.5

-60

0

60

120

180

Tj (°C)

VGS(th)

(V)

max

typ

min

03ng53

10-6

10-5

10-4

10

-3

10-2

10-1

0

0.5

1

1.5

2

2.5

3

VGS (V)

ID

(A)

max

typ

min

03nh53

0

50

100

150

200

020

40

60

ID (A)

gfs

(S)

03nh58

0

4000

8000

12000

10-1

1

10

102

VDS (V)

C

(pF)

Ciss

Coss

Crss