Philips Semiconductors

BUK9E04-30B

TrenchMOS™ logic level FET

Product data

Rev. 01 — 14 November 2003

9 of 13

9397 750 12108

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.

03no68

0

25

50

75

100

01

23

VGS (V)

ID

(A)

Tj = 175 °C

Tj = 25 °C

03no66

0

1

2

3

4

5

0

204060

QG (nC)

VGS

(V)

VDD = 14 V

VDD = 24 V

03no65

0

25

50

75

100

0.0

0.2

0.4

0.6

0.8

1.0

VSD (V)

IS

(A)

Tj = 175 °C

Tj = 25 °C