PBSS4160U_3

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 03 — 11 December 2009

3 of 14

NXP Semiconductors

PBSS4160U

5.

Limiting values

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

[3]

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

80

V

collector-emitter voltage

open base

-

60

V

emitter-base voltage

open collector

-

5

V

collector current (DC)

[1] -750

mA

[2] -930

mA

[3] -1

A

peak collector current

-

2

A

base current (DC)

-

300

mA

peak base current

-

1

A

total power dissipation

[1] -250

mW

[2] -350

mW

[3] -415

mW

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

(3) FR4 PCB, standard footprint

Fig 1.

Power derating curves

006aaa501

0

160

120

40

80

0.2

0.3

0.1

0.4

0.5

(W)

0

(3)

(2)

(1)