PBHV9040Z datasheet(5/12 Pages) NXP

Part #	PBHV9040Z

Description	500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

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Manufacturer	NXP [NXP Semiconductors]

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PBHV9040Z_2

Product data sheet

Rev. 02 — 15 January 2009

5 of 12

NXP Semiconductors

PBHV9040Z

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

7.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Table 7.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = −320 V; IE =0A

-

−100 nA

VCB = −320 V; IE =0A;

Tj = 150 °C

--

−10

µA

ICES

collector-emitter

cut-off current

VCE = −320 V; VBE =0V

-

−100 nA

IEBO

emitter-base cut-off

current

VEB = −4 V; IC =0A

-

−100 nA

hFE

DC current gain

VCE = −10 V

IC = −50 mA

100

200

-

IC = −100 mA

80

200

-

IC = −250 mA

[1] 10

25

-

VCEsat

collector-emitter

saturation voltage

IC = −100 mA; IB = −20 mA

-

−110 −200 mV

VBEsat

base-emitter

saturation voltage

IC = −100 mA; IB = −20 mA

[1] -

−1

−1.1

V

fT

transition frequency

VCE = −10 V; IE = −10 mA;

f = 100 MHz

-

55

-

MHz

Cc

collector capacitance

VCB = −20 V; IE =ie =0A;

f=1MHz

-7

-pF

Ce

emitter capacitance

VEB = −0.5 V; IC =ic =0A;

f=1MHz

-

150

-

pF

td

delay time

VCC = −2 V; IC = −0.15 A;

IBon = −0.03 A;

IBoff = 0.03 A

-9

-ns

tr

rise time

-

1810

-

ns

ton

turn-on time

-

1819

-

ns

ts

storage time

-

715

-

ns

tf

fall time

-

1085

-

ns

toff

turn-off time

-

1800

-

ns

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