BLF6G22-180PN datasheet(5/11 Pages) NXP

Part #	BLF6G22-180PN

Description	Power LDMOS transistor

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Manufacturer	NXP [NXP Semiconductors]

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BLF6G22-180PN_2

Product data sheet

Rev. 02 — 23 April 2008

5 of 11

NXP Semiconductors

BLF6G22-180PN

Power LDMOS transistor

VDS =32V; IDq = 1600 mA; f1 = 2162.5 MHz;

f2 = 2167.5 MHz; carrier spacing 5 MHz.

VDS = 32 V; IDq = 1600 mA; f1 = 2162.5 MHz;

f2 = 2167.5 MHz; carrier spacing 5 MHz.

Fig 4.

2-carrier W-CDMA power gain and drain

efﬁciency as functions of average load power;

typical values

Fig 5.

2-carrier W-CDMA adjacent channel power

ratio as function of average load power;

typical values

PL(AV) (W)

070

60

20

40

10

30

50

001aah635

18

16

20

21

Gp

(dB)

14

19

17

15

20

10

30

35

ηD

(%)

0

25

15

5

Gp

ηD

PL(AV) (W)

070

60

20

40

10

30

50

001aah636

−40

−50

−30

−20

ACPR

(dBc)

−60

VDS =32V; IDq = 1600 mA; f1 = 2157.5 MHz;

f2 = 2167.5 MHz; carrier spacing 10 MHz.

VDS = 32 V; IDq = 1600 mA; f1 = 2157.5 MHz;

f2 = 2167.5 MHz; carrier spacing 10 MHz.

Fig 6.

2-carrier W-CDMA power gain and drain

efﬁciency as functions of average load power;

typical values

Fig 7.

2-carrier W-CDMA adjacent channel power

ratio and third order intermodulation distortion

as functions of average load power; typical

values

PL(AV) (W)

070

60

20

40

10

30

50

001aah637

18

16

20

21

Gp

(dB)

14

19

17

15

20

10

30

35

ηD

(%)

0

25

15

5

Gp

ηD

PL(AV) (W)

070

60

20

40

10

30

50

001aah638

−40

−50

−30

−20

ACPR,

IMD3

(dBc)

−60

IMD3

ACPR

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BLF6G22-180PN Datasheet(PDF) 5 Page - NXP Semiconductors

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