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BUJ105AD Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUJ105AD Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page  9397 750 14196 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 14 December 2004 5 of 12 Philips Semiconductors BUJ105AD Silicon diffused power transistor VIM = −6 V to +8 V; VCC = 250 V; tp = 20 µs; δ =tp/T = 0.01. RB and RL calculated from ICon and IBon requirements. Fig 5. Test circuit for resistive load switching Fig 6. Switching times waveforms for resistive load VCC = 300 V; VBB = −5 V; LC = 200 µH; LB = 1 µH. Fig 7. Test circuit for inductive load switching Fig 8. Switching times waveforms for inductive load 001aab989 tp RB VIM 0 RL DUT VCC T 001aab990 IC IB 10 % 10 % 90 % 90 % ton toff tstg tf t t IBon −IBoff ICon tr ≤ 30 ns 001aab991 VCC LC DUT LB IBon VBB 001aab992 IC IB 90 % toff IBon tstg tf t t −IBoff ICon 10 % |
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