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BUJ103AD Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUJ103AD Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 9397 750 14195 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 14 December 2004 6 of 12 Philips Semiconductors BUJ103AD Silicon diffused power transistor Tj = 25 °C. Fig 9. DC current gain as a function of collector current; typical values Fig 10. Collector-emitter saturation voltage as a function of base current; typical values IC/IB = 4. IC/IB = 4. Fig 11. Base-emitter saturation voltage as a function of collector current; typical values Fig 12. Collector-emitter saturation voltage as a function of collector current; typical values 001aab994 IC (A) 10−2 10 1 10−1 10 102 hFE 1 VCE = 5 V 1 V Tj = 25 °C IB (A) 10−2 10 1 10−1 001aab995 0.8 1.2 0.4 1.6 2.0 VCEsat (V) 0 IC = 1 A 2 A 3 A 4 A 001aab996 VBEsat (V) IC (A) 10−1 10 1 0.6 0.8 0.2 0.4 1.0 1.2 1.4 0 001aab997 VCEsat (V) IC (A) 10−1 10 1 0.2 0.1 0.3 0.4 0.5 0 |
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