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BT236X-800G Datasheet(PDF) 8 Page - NXP Semiconductors |
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BT236X-800G Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 12 page BT236X_SER_F_G_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 14 March 2006 8 of 12 Philips Semiconductors BT236X series F and G 6 A Four-quadrant triacs Vo = 1.26 V Rs = 0.0378 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj =25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt. (1) Off-state dV/dt limit for BT236X-600G_800G (2) Off-state dV/dt limit for BT236X-600_800 (3) Off-state dV/dt limit for BT236X-600F Fig 11. Normalized holding current as a function of junction temperature Fig 12. Typical commutation dV/dt as a function of junction temperature 003aab311 0 5 10 15 20 25 0123 VT (V) IT (A) (1) (2) (3) Tj (°C) −50 150 100 050 001aab100 1 2 3 0 IL IL(25°C) Tj (°C) −50 150 100 050 001aab099 1 2 3 0 IH IH(25°C) 001aae043 Tj (°C) 0 150 100 50 102 10 103 dV/dt (V/ µs) 1 (2) (1) (3) 7.9 dlcom/dt (A/ms) = 10 6.1 4.7 3.6 2.8 |
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