9397 750 15178

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 02 — 7 June 2005

3 of 10

Philips Semiconductors

PEMD16; PUMD16

NPN/PNP resistor-equipped transistors; R1 = 22 k

Ω, R2 = 47 kΩ

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Reflow soldering is the only recommended soldering method.

Table 6:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor; for the PNP transistor with negative polarity

collector-base voltage

open emitter

-

50

V

collector-emitter voltage

open base

-

50

V

emitter-base voltage

open collector

-

5

V

input voltage TR1

positive

-

+40

V

negative

-

−7V

input voltage TR2

positive

-

+7

V

negative

-

−40

V

output current

-

100

mA

peak collector current

-

100

mA

total power dissipation

SOT363

[1] -

200

mW

SOT666

[1] [2] -

200

mW

storage temperature

−65

+150

°C

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

Per device

total power dissipation

SOT363

[1] -

300

mW

SOT666

[1] [2] -

300

mW