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IRHM8450 Datasheet(PDF) 2 Page - International Rectifier |
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IRHM8450 Datasheet(HTML) 2 Page - International Rectifier |
2 / 12 page 2 www.irf.com IRHM7450, JANSR2N7270 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 500 — — V VGS =0 V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.6 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source — — 0.45 VGS = 12V, ID = 7.0A On-State Resistance — — 0.50 Ω VGS = 12V, ID = 11A VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA gfs Forward Transconductance 4.0 — — S ( )VDS > 15V, IDS = 7.0A IDSS Zero Gate Voltage Drain Current — — 50 VDS= 400V,VGS=0V — — 250 VDS = 400V VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 150 VGS = 12V, ID = 11A Qgs Gate-to-Source Charge — — 30 nC VDS = 250V Qgd Gate-to-Drain (‘Miller’) Charge — — 75 td(on) Turn-On Delay Time — — 45 VDD = 250V, ID = 11A, tr Rise Time — — 190 VGS = 12V, RG = 2.35Ω td(off) Turn-Off Delay Time — — 190 tf Fall Time — — 130 LS + LD Total Inductance — 8.7 — Ciss Input Capacitance — 4000 — VGS = 0V, VDS = 25V Coss Output Capacitance — 330 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 52 — nA nH ns µA Note: Corresponding Spice and Saber models are available on the International Rectifier Website. For footnotes refer to the last page Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 0.83 RthCS Case-to-sink — 0.21 — RthJA Junction-to-Ambient — — 48 Typical socket mount °C/W Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 11 ISM Pulse Source Current (Body Diode) À —— 44 VSD Diode Forward Voltage — — 1.6 V Tj = 25°C, IS = 11A, VGS = 0V Ã trr Reverse Recovery Time — — 1100 ns Tj = 25°C, IF = 11A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 16 µC VDD ≤ 50V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) |
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