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PMEG2005CT Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMEG2005CT Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 14 page PMEG2005CT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 — 22 June 2010 3 of 14 NXP Semiconductors PMEG2005CT 500 mA low VF dual MEGA Schottky barrier rectifier [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Tj =25 °C prior to surge. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [4] Device mounted on a ceramic PCB, Al2O3, standard footprint. [5] Soldering point of cathode tab. Per device; one diode loaded Ptot total power dissipation Tamb ≤ 25 °C [3] -330 mW [4] -400 mW [1] -460 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device; one diode loaded Rth(j-a) thermal resistance from junction to ambient in free air [1] [2] - - 375 K/W [3] - - 310 K/W [4] - - 270 K/W Rth(j-sp) thermal resistance from junction to solder point [5] --60 K/W |
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