PMEG2005CT

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Product data sheet

Rev. 2 — 22 June 2010

3 of 14

NXP Semiconductors

PMEG2005CT

[1]

[2]

[3]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[4]

6.

Thermal characteristics

[1]

For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

[4]

[5]

Soldering point of cathode tab.

Per device; one diode loaded

total power dissipation

[3] -330

mW

[4] -400

mW

[1] -460

mW

junction temperature

-

150

°C

ambient temperature

−55

+150

°C

storage temperature

−65

+150

°C

Table 5.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device; one diode loaded

thermal resistance from

junction to ambient

in free air

[1]

[2] -

-

375

K/W

[3] -

-

310

K/W

[4] -

-

270

K/W

thermal resistance from

junction to solder point

[5] --60

K/W