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MCP6292 Datasheet(PDF) 3 Page - Microchip Technology |
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MCP6292 Datasheet(HTML) 3 Page - Microchip Technology |
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3 / 36 page  © 2007 Microchip Technology Inc. DS21812E-page 3 MCP6291/1R/2/3/4/5 AC ELECTRICAL SPECIFICATIONS MCP6293/MCP6295 CHIP SELECT (CS) SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, T A = +25°C, VDD = +2.4V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, VL = VDD/2, RL = 10 kΩ to VL, CL = 60 pF, and CS is tied low (refer to Figure 1-2 and Figure 1-3). Parameters Sym Min Typ Max Units Conditions AC Response Gain Bandwidth Product GBWP — 10.0 — MHz Phase Margin at Unity-Gain PM — 65 — ° G = +1 V/V Slew Rate SR — 7 — V/µs Noise Input Noise Voltage Eni —4.2 — µVP-P f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni —8.7 — nV/ √Hz f = 10 kHz Input Noise Current Density ini —3 — fA/ √Hz f = 1 kHz Electrical Characteristics: Unless otherwise indicated, T A = +25°C, VDD = +2.4V to +5.5V, VSS = GND, VCM =VDD/2, VOUT ≈ VDD/2, VL = VDD/2, RL = 10 kΩ to VL, CL = 60 pF, and CS is tied low (refer to Figure 1-2 and Figure 1-3). Parameters Sym Min Typ Max Units Conditions CS Low Specifications CS Logic Threshold, Low VIL VSS —0.2 VDD V CS Input Current, Low ICSL —0.01 — µA CS = VSS CS High Specifications CS Logic Threshold, High VIH 0.8 VDD —VDD V CS Input Current, High ICSH —0.7 2 µA CS = VDD GND Current per Amplifier ISS —-0.7 — µA CS = VDD Amplifier Output Leakage — — 0.01 — µA CS = VDD Dynamic Specifications (Note 1) CS Low to Valid Amplifier Output, Turn-on Time tON —4 10 µs CS Low ≤ 0.2 V DD, G = +1 V/V, VIN = VDD/2, VOUT = 0.9 VDD/2, VDD = 5.0V CS High to Amplifier Output High-Z tOFF —0.01 — µs CS High ≥ 0.8 V DD, G = +1 V/V, VIN = VDD/2, VOUT = 0.1 VDD/2 Hysteresis VHYST —0.6 — V VDD = 5V Note 1: The input condition (VIN) specified applies to both op amp A and B of the MCP6295. The dynamic specification is tested at the output of op amp B (VOUTB). |
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