RBV800D - RBV810D

SILICON BRIDGE RECTIFIERS

PRV : 50 - 1000 Volts

Io : 8.0 Amperes

FEATURES :

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Ideal for printed circuit board

* Very good heat dissipation

* Pb / RoHS Free

MECHANICAL DATA :

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

* Weight : 7.97 grams ( Approximaly )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

°C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

RBV

800D

RBV

801D

RBV

802D

RBV

804D

RBV

806D

RBV

808D

RBV

810D

UNIT

Maximum Recurrent Peak Reverse Voltage

50

100

200

400

600

800

1000

V

Maximum RMS Voltage

35

70

140

280

420

560

700

V

Maximum DC Blocking Voltage

50

100

200

400

600

800

1000

V

Maximum Average Forward Current Tc = 55

°C

8.0

A

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

I

166

A

1.0

V

Maximum DC Reverse Current

Ta = 25

°C

10

µA

at Rated DC Blocking Voltage

Ta = 100

°C

200

µA

Typical Thermal Resistance (Note 1)

R

2.2

°C/W

Typical Thermal Resistance at Junction to Ambient

R

15

°C/W

Operating Junction Temperature Range

- 40 to + 150

°C

Storage Temperature Range

- 40 to + 150

°C

Notes :

1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink.

Page 1 of 2

Rev. 03 : September 9, 2005

RATING

300

A

RBV25

Dimensions in millimeters

C3

4.9

± 0.2

3.9

± 0.2

~

∅ 3.2 ± 0.1

~

0.7

± 0.1

1.0

± 0.1

2.0

± 0.2

30

± 0.3

7.5

±0.2

10

±0.2

+

7.5

±0.2