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VND7NV04-E Datasheet(PDF) 9 Page - STMicroelectronics |
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VND7NV04-E Datasheet(HTML) 9 Page - STMicroelectronics |
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9 / 37 page  VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1 Electrical specifications Doc ID 7383 Rev 3 9/37 Switching (Tj=25 °C, unless otherwise specified) td(on) Turn-on delay time VDD=15 V; ID=3.5 A Vgen=5 V; Rgen=RIN MIN=150 Ω (see figure Figure 4.) 100 300 ns tr Rise time 470 1500 ns td(off) Turn-off delay time 500 1500 ns tf Fall time 350 1000 ns td(on) Turn-on delay time VDD=15 V; ID=3.5 A Vgen=5 V; Rgen=2.2 KΩ (see figure Figure 4.) 0.75 2.3 µs tr Rise time 4.6 14.0 µs td(off) Turn-off delay time 5.4 16.0 µs tf Fall time 3.6 11.0 µs (dI/dt)on Turn-on current slope VDD=15 V; ID=3.5 A Vgen=5 V; Rgen=RIN MIN=150 Ω 6.5 A/µs Qi Total input charge VDD=12 V; ID=3.5 A; VIN=5 V Igen=2.13 mA (see figure Figure 7.) 18 nC Source drain diode (Tj=25 °C, unless otherwise specified) VSD (1) Forward on voltage ISD=3.5 A; VIN=0 V 0.8 V trr Reverse recovery time ISD=3.5 A; dI/dt=20 A/µs VDD=30 V; L=200 µH (see test circuit, figure Figure 5.) 220 ns Qrr Reverse recovery charge 0.28 µC IRRM Reverse recovery current 2.5 A Protections (-40 °C < Tj < 150 °C, unless otherwise specified) Ilim Drain current limit VIN=5 V; VDS=13 V 6 9 12 A tdlim Step response current limit VIN=5 V; VDS=13 V 4.0 µs Tjsh Over temperature shutdown 150 175 200 °C Tjrs Over temperature reset 135 °C Igf Fault sink current VIN=5 V; VDS=13 V; Tj=Tjsh 15 mA Eas Single pulse avalanche energy starting Tj=25 °C; VDD=24 V VIN=5 V Rgen=RIN MIN=150 Ω; L=24 mH (see figures Figure 6. & Figure 8.) 200 mJ 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 4. Electrical characteristics (continued) Symbol Parameter Test conditions Min Typ Max Unit |
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