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RB154 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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RB154 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page RB150 - RB158 SILICON BRIDGE RECTIFIERS PRV : 50 - 800 Volts Io : 1.5 Amperes FEATURES : * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VDC * Ideal for printed circuit board * Pb / RoHS Free MECHANICAL DATA : * Case : Molded plastic * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.4 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL RB150 RB151 RB152 RB154 RB156 RB158 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 V Maximum Average Forward Current Tc=50 °C IF(AV) 1.5 A Peak Forward Surge Current, Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage per Diode at IF = 1 A VF 0.95 V Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 100 µA Typical Thermal Resistance (Note 1) R θJL 15 °C/W Operating Junction Temperature Range TJ - 40 to + 140 °C Storage Temperature Range TSTG - 40 to + 140 °C Note : 1 ) Thermal resistance from Junction to lead mounted on P.C. Board with 0.47" X 0.47" ( 12mm X 12mm ) Cu pads. Page 1 of 2 Rev. 02 : March 24, 2005 RATING IFSM 40 A RB 0.105 (2.66) 0.085 (2.16) + AC AC 0.71 (18.0) 0.63 (16.0) 0.276 (7.01) 0.236 (5.99) 0.16 (4.00) 0.14 (3.55) 0.035 (0.89) 0.028 (0.71) 0.500 (12.7) MIN. Dimensions in inches and ( millimeter ) 0.825 (20.95) 0.605 (15.36) |
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