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BSC190N15NS3G Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSC190N15NS3G Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page BSC190N15NS3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC 1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 50 A T C=100 °C 33 Pulsed drain current 2) I D,pulse T C=25 °C 200 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 170 mJ Gate source voltage 3) V GS ±20 V Power dissipation P tot T C=25 °C 125 W Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value V DS 150 V R DS(on),max 19 m Ω I D 50 A Product Summary Type BSC190N15NS3 G Package PG-TDSON-8 Marking 190N15NS Rev. 2.4 page 1 2009-11-04 |
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