BSC190N15NS3G datasheet(1/9 Pages) INFINEON

Part #	BSC190N15NS3G

Description	OptiMOS3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSC190N15NS3 G

OptiMOS™3 Power-Transistor

Features

• N-channel, normal level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• 150 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

1) for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

50

A

T C=100 °C

33

Pulsed drain current

2)

I D,pulse

T C=25 °C

200

Avalanche energy, single pulse

E AS

I D=50 A, R GS=25 Ω

170

mJ

Gate source voltage

3)

V GS

±20

V

Power dissipation

P tot

T C=25 °C

125

W

Operating and storage temperature

T j, T stg

-55 ... 150

°C

IEC climatic category; DIN IEC 68-1

55/175/56

Value

V DS

150

V

R DS(on),max

19

m

Ω

I D

50

A

Product Summary

Type

BSC190N15NS3 G

Package

PG-TDSON-8

Marking

190N15NS

Rev. 2.4

page 1

2009-11-04

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