2SK2611

2010-01-29

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2611

DC−DC Converter, Relay Drive and Motor Drive

Applications

Low drain−source ON-resistance

High forward transfer admittance

Low leakage current

Enhancement−mode

Characteristics

Symbol

Rating

Unit

Drain−source voltage

900

V

900

V

Gate−source voltage

±30

V

DC

(Note 1)

9

A

Drain current

Pulse (Note 1)

27

A

Drain power dissipation (Tc = 25°C)

150

W

Single pulse avalanche energy

(Note 2)

663

mJ

Avalanche current

9

A

Repetitive avalanche energy (Note 3)

15

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

0.833

°C / W

Thermal resistance, channel to ambient

50

°C / W

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device.

Please handle with caution.

Unit: mm

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

JEDEC

―

JEITA

SC-65

TOSHIBA

2-16C1B

Weight: 4.6 g (typ.)