MUN5311DW1T1G_09 datasheet(1/34 Pages) ONSEMI

Part #	MUN5311DW1T1G

Description	Dual Bias Resistor Transistors

Download	34 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

1 / 34 page

October, 2009 − Rev. 12

1

Publication Order Number:

MUN5311DW1T1/D

MUN5311DW1T1G Series

Preferred Devices

Dual Bias Resistor

Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

The Bias Resistor Transistor (BRT) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating

them

into

a

single

device.

In

the

MUN5311DW1T1G series, two complementary BRT devices are

housed in the SOT−363 package which is ideal for low power surface

mount applications where board space is at a premium.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1

and Q2, − minus sign for Q1 (PNP) omitted)

Rating

Symbol

Value

Unit

Collector-Base Voltage

VCBO

50

Vdc

Collector-Emitter Voltage

VCEO

50

Vdc

Collector Current

IC

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD

187 (Note 1)

256 (Note 2)

1.5 (Note 1)

2.0 (Note 2)

mW

mW/°C

Thermal Resistance −

Junction-to-Ambient

RqJA

670 (Note 1)

490 (Note 2)

°C/W

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD

250 (Note 1)

385 (Note 2)

2.0 (Note 1)

3.0 (Note 2)

mW

mW/°C

Thermal Resistance −

Junction-to-Ambient

RqJA

493 (Note 1)

325 (Note 2)

°C/W

Thermal Resistance −

Junction-to-Lead

RqJL

188 (Note 1)

208 (Note 2)

°C/W

Junction and Storage Temperature

TJ, Tstg

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

SOT−363

CASE 419B

STYLE 1

MARKING DIAGRAM

Preferred devices are recommended choices for future use

and best overall value.

ORDERING AND DEVICE MARKING

INFORMATION

See detailed ordering, shipping, and specific marking

information in the table on page 2 of this data sheet.

Q1

R1

R2

R1

Q2

(1)

(2)

(3)

(4)

(5)

(6)

http://onsemi.com

1

6

http://onsemi.com

xx M G

G

1

6

xx

= Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

Similar Part No. - MUN5311DW1T1G_09

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	MUN5311DW1T1G	373Kb / 35P	Dual Bias Resistor Transistors December, 2005 ??Rev. 11
	MUN5311DW1T1G	270Kb / 34P	Dual Bias Resistor Transistors March, 2014 ??Rev. 14
	MUN5311DW1T1G	99Kb / 10P	Complementary Bias Resistor Transistors May, 2014 ??Rev. 2

More results

Similar Description - MUN5311DW1T1G_09

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	MUN5111DW1T1	147Kb / 20P	Dual Bias Resistor Transistors September, 2005 ??Rev. 6
	MUN5211DW1T1	139Kb / 21P	Dual Bias Resistor Transistors December, 2005 ??Rev. 7
	NSBC114EDXV6	81Kb / 9P	Dual Bias Resistor Transistors May, 2006 ??Rev. 6
Motorola, Inc	MUN5311DW1T1	308Kb / 16P	Dual Bias Resistor Transistors
ON Semiconductor	MUN5335DW1T1	281Kb / 34P	Dual Bias Resistor Transistors September, 2004 ??Rev. 9
Leshan Radio Company	LMUN5311DW1T1G	275Kb / 29P	Dual Bias Resistor Transistors
	LMUN5316DW1T1G	268Kb / 29P	Dual Bias Resistor Transistors
	LMUN5332DW1T1G	268Kb / 29P	Dual Bias Resistor Transistors
	MUN5211DW1T1	199Kb / 8P	Dual Bias Resistor Transistors
	MUN5311DW1T1	367Kb / 13P	Dual Bias Resistor Transistors
	LMUN5114DW1T1G	352Kb / 12P	Dual Bias Resistor Transistors

More results

MUN5311DW1T1G Datasheet(PDF) 1 Page - ON Semiconductor

MUN5311DW1T1G Datasheet(HTML) 1 Page - ON Semiconductor

Similar Part No. - MUN5311DW1T1G_09

Similar Description - MUN5311DW1T1G_09

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34

Datasheet Download

Link URL