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MUN5230DW1T1G Datasheet(PDF) 1 Page - ON Semiconductor

Part # MUN5230DW1T1G
Description  Dual Bias Resistor Transistors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MUN5230DW1T1G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 8
1
Publication Order Number:
MUN5211DW1T1/D
MUN5211DW1T1G Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5211DW1T1G
series, two BRT devices are housed in the SOT−363 package which is
ideal for low power surface mount applications where board space is
at a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA
670 (Note 1)
490 (Note 2)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA
493 (Note 1)
325 (Note 2)
°C/W
Thermal Resistance,
Junction-to-Lead
RqJL
188 (Note 1)
208 (Note 2)
°C/W
Junction and Storage Temperature
TJ, Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
Q1
R1
R2
R2
R1
Q2
(1)
(2)
(3)
(4)
(5)
(6)
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAM
xx M G
G
1
6
xx
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
1


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