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MMBT6427LT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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MMBT6427LT1G Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 6 page  MMBT6427LT1G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 40 − Vdc Emitter−Base Breakdown Voltage (IC = 10 mAdc, IC = 0) V(BR)EBO 12 − Vdc Collector Cutoff Current (VCE = 25 Vdc, IB = 0) ICES − 1.0 mAdc Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO − 50 nAdc Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO − 50 nAdc ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) hFE 10,000 20,000 14,000 100,000 200,000 140,000 − Collector−Emitter Saturation Voltage (IC = 50 mAdc, IB = 0.5 mAdc) (IC = 500 mAdc, IB = 0.5 mAdc) VCE(sat)(3) − − 1.2 1.5 Vdc Base −Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) VBE(sat) − 2.0 Vdc Base −Emitter On Voltage (IC = 50 mAdc, VCE = 5.0 Vdc) VBE(on) − 1.75 Vdc SMALL−SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 7.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 15 pF CurrentGain − High Frequency (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) |hfe| 1.3 − Vdc Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz) NF − 10 dB 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model |
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