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NUF6410MN Datasheet(PDF) 2 Page - ON Semiconductor

Part # NUF6410MN
Description  6-Channel EMI Filter with Integrated ESD Protection
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NUF6410MN Datasheet(HTML) 2 Page - ON Semiconductor

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NUF6410MN
http://onsemi.com
2
Figure 3. Pin Diagram
4
3
2
1
(Bottom View)
9
10
11
12
8
7
6
5
GND
Table 1. FUNCTIONAL PIN DESCRIPTION
Filter
Device Pins
Description
Filter 1
1 & 12
Filter + ESD Channel 1
Filter 2
2 & 11
Filter + ESD Channel 2
Filter 3
3 & 10
Filter + ESD Channel 3
Filter 4
4 & 9
Filter + ESD Channel 4
Filter 5
5 & 8
Filter + ESD Channel 5
Filter 6
6 & 7
Filter + ESD Channel 6
Ground Pad
GND
Ground
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000−4−2
Contact Discharge
VPP
8.0
kV
DC Power per Resistor
PR
100
mW
DC Power per Package
PT
600
mW
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Reverse Working Voltage
VRWM
5.0
V
Breakdown Voltage
VBR
IR = 1.0 mA
6.0
7.0
V
Leakage Current
IR
VRWM = 3.3 V
10
100
nA
Resistance
RA
IR = 20 mA
85
100
115
W
Diode Capacitance
Cd
VR = 2.5 V, f = 1.0 MHz
7.0
9.0
pF
Line Capacitance
CL
VR = 2.5 V, f = 1.0 MHz
14
18
pF
3 dB Cut−Off Frequency (Note 1)
f3dB
Above this frequency,
appreciable attenuation occurs
250
MHz
6 dB Cut−Off Frequency (Note 1)
f6dB
Above this frequency,
appreciable attenuation occurs
400
MHz
1. 50 W source and 50 W load termination.


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