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NUF6410MN Datasheet(PDF) 2 Page - ON Semiconductor |
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NUF6410MN Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NUF6410MN http://onsemi.com 2 Figure 3. Pin Diagram 4 3 2 1 (Bottom View) 9 10 11 12 8 7 6 5 GND Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Description Filter 1 1 & 12 Filter + ESD Channel 1 Filter 2 2 & 11 Filter + ESD Channel 2 Filter 3 3 & 10 Filter + ESD Channel 3 Filter 4 4 & 9 Filter + ESD Channel 4 Filter 5 5 & 8 Filter + ESD Channel 5 Filter 6 6 & 7 Filter + ESD Channel 6 Ground Pad GND Ground MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC61000−4−2 Contact Discharge VPP 8.0 kV DC Power per Resistor PR 100 mW DC Power per Package PT 600 mW Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range TSTG −55 to 150 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage VRWM 5.0 V Breakdown Voltage VBR IR = 1.0 mA 6.0 7.0 V Leakage Current IR VRWM = 3.3 V 10 100 nA Resistance RA IR = 20 mA 85 100 115 W Diode Capacitance Cd VR = 2.5 V, f = 1.0 MHz 7.0 9.0 pF Line Capacitance CL VR = 2.5 V, f = 1.0 MHz 14 18 pF 3 dB Cut−Off Frequency (Note 1) f3dB Above this frequency, appreciable attenuation occurs 250 MHz 6 dB Cut−Off Frequency (Note 1) f6dB Above this frequency, appreciable attenuation occurs 400 MHz 1. 50 W source and 50 W load termination. |
Similar Part No. - NUF6410MN_09 |
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Similar Description - NUF6410MN_09 |
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