NTMFS4898NFT1G datasheet(3/6 Pages) ONSEMI

Part #	NTMFS4898NFT1G

Description	Power MOSFET 30 V, 117 A, Single N?묬hannel, SO??FL

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NTMFS4898NF

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

11.3

ns

Rise Time

tr

17.8

Turn−Off Delay Time

td(OFF)

37.3

Fall Time

tf

5.6

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 2.0 A

TJ = 25°C

0.38

0.70

V

TJ = 125°C

0.31

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

26.7

ns

Charge Time

ta

13.7

Discharge Time

tb

13.0

Reverse Recovery Charge

QRR

17.3

nC

PACKAGE PARASITIC VALUES

Source Inductance

LS

TA = 25°C

0.65

nH

Drain Inductance

LD

0.20

Gate Inductance

LG

1.5

Gate Resistance

RG

1.4

W

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

TYPICAL CHARACTERISTICS

4.0 V

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

5

4

3

2

1

0

20

40

60

80

160

180

200

4

3

2

1

0

20

40

160

100

120

140

TJ = 25°C

VGS = 4.4 V

10 V

7.5 V

4.2 V

3.8 V

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

VDS = 10 V

TJ = 25°C

TJ = 125°C

TJ = −55°C

60

80

120

140

100

4.5

3.5

2.5

1.5

0.5

4.5

3.5

2.5

1.5

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NTMFS4898NFT1G Datasheet(PDF) 3 Page - ON Semiconductor

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