MMBD2837LT1G datasheet(2/4 Pages) ONSEMI

Part #	MMBD2837LT1G

Description	Monolithic Dual Switching Diodes

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBD2837LT1G, MMBD2838LT1G

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ELECTRICAL CHARACTERISTICS (EACH DIODE) (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (I(BR) = 100 mAdc)

MMBD2837LT1G

MMBD2838LT1G

V(BR)

35

75

−

Vdc

Reverse Voltage Leakage Current (Note 3.)

(VR = 30 Vdc)

MMBD2837LT1G

(VR = 50 Vdc)

MMBD2838LT1G

IR

−

0.1

mAdc

Diode Capacitance (VR = 0 V, f = 1.0 MHz)

CT

−

4.0

pF

Forward Voltage (IF = 10 mAdc)

Forward Voltage (IF = 50 mAdc)

Forward Voltage (IF = 100 mAdc)

VF

−

1.0

1.2

Vdc

Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)

trr

−

4.0

ns

3. For each individual diode while the second diode is unbiased.

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V

2.0 k

820

W

0.1

mF

DUT

VR

100

mH

0.1

mF

50

W OUTPUT

PULSE

GENERATOR

50

W INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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