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MMBD352LT3G Datasheet(PDF) 1 Page - ON Semiconductor

Part # MMBD352LT3G
Description  Dual Hot Carrier Mixer Diodes
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMBD352LT3G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 7
1
Publication Order Number:
MMBD352LT1/D
MMBD352LT1G,
MMBD353LT1G,
MMBD354LT1G,
MMBD355LT1G
Dual Hot Carrier Mixer
Diodes
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultra−fast switching
circuits.
Features
Very Low Capacitance − Less Than 1.0 pF @ Zero V
Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
7.0
VCC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
(EACH DIODE)
Rating
Symbol
Min
Max
Unit
Forward Voltage
(IF = 10 mAdc)
VF
0.60
V
Reverse Leakage Current (Note 3)
(VR = 3.0 V)
(VR = 7.0 V)
IR
0.25
10
mA
Capacitance
(VR = 0 V, f = 1.0 MHz)
C
1.0
pF
3. For each individual diode while the second diode is unbiased.
http://onsemi.com
SOT−23 (TO−236)
CASE 318
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
Mxx M G
G
Mxx = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
See detailed ordering, marking, and shipping information in the
package dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MMBD352LT1
STYLE 11
1
ANODE
3
CATHODE/ANODE
2
CATHODE
MMBD353LT1
STYLE 19
1
CATHODE
3
CATHODE/ANODE
2
ANODE
MMBD354LT1
STYLE 9
3
CATHODE
1 ANODE
ANODE 3
1 CATHODE
2 CATHODE
MMBD355LT1
STYLE 12
2 ANODE


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