Electronic Components Datasheet Search |
|
STGB14NC60KDT4 Datasheet(PDF) 4 Page - STMicroelectronics |
|
STGB14NC60KDT4 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STGB14NC60KD, STGF14NC60KD, STGP14NC60KD 4/16 Doc ID 11424 Rev 7 2 Electrical characteristics (Tj =25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE= 0) IC= 1 mA 600 V IGES Gate-emitter leakage current (VCE = 0) VGE= ±20 V ±100 nA ICES Collector cut-off current (VGE = 0) VCE= 600 V VCE= 600 V, Tj= 125 °C 150 1 µA mA VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 4.5 6.5 V VCE(sat) Collector-emitter saturation voltage VGE= 15 V, IC= 7 A VGE= 15 V, IC= 7 A, Tj= 125 °C 2.1 1.8 2.5 V V gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VCE = 15 V , IC = 7 A 3.2 S Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE= 0 - 760 86 15.5 - pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390 V, IC = 7 A, VGE = 15 V (see Figure 19) - 34.4 8.1 16.4 - nC nC nC |
Similar Part No. - STGB14NC60KDT4 |
|
Similar Description - STGB14NC60KDT4 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |