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MMBTA56LT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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MMBTA56LT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 6 1 Publication Order Number: MMBTA55LT1/D MMBTA55LT1G, MMBTA56LT1G Driver Transistors PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage MMBTA55 MMBTA56 VCEO −60 −80 Vdc Collector−Base Voltage MMBTA55 MMBTA56 VCBO −60 −80 Vdc Emitter−Base Voltage VEBO −4.0 Vdc Collector Current − Continuous IC −500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. SOT−23 CASE 318 STYLE 6 2 3 1 COLLECTOR 3 1 BASE 2 EMITTER http://onsemi.com *Date Code orientation and/or overbar may vary depending upon manufacturing location. 1 2xx M G G 2xx = Device Code x = H for MMBTA55LT1 xx = GM for MMBTA56LT1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) MARKING DIAGRAM See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ORDERING INFORMATION |
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