© Semiconductor Components Industries, LLC, 2010

October, 2010 − Rev. 6

1

Publication Order Number:

MMBTA55LT1/D

MMBTA55LT1G,

MMBTA56LT1G

Driver Transistors

PNP Silicon

Features

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

MMBTA55

MMBTA56

−60

−80

Vdc

Collector−Base Voltage

MMBTA55

MMBTA56

−60

−80

Vdc

Emitter−Base Voltage

−4.0

Vdc

Collector Current − Continuous

−500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

Derate above 25°C

225

1.8

mW

mW/°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25°C

300

2.4

mW

mW/°C

Thermal Resistance, Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

SOT−23

CASE 318

STYLE 6

2

3

1

COLLECTOR

3

1

BASE

2

EMITTER

http://onsemi.com

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

1

2xx M G

G

2xx = Device Code

x = H for MMBTA55LT1

xx = GM for MMBTA56LT1

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION