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NTB125N02RT4G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTB125N02RT4G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 7 1 Publication Order Number: NTB125N02R/D NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK Features • Planar HD3e Process for Fast Switching Performance • Body Diode for Low trr and Qrr and Optimized for Synchronous Operation • Low Ciss to Minimize Driver Loss • Optimized Qgd and RDS(on) for Shoot−through Protection • Low Gate Charge • Pb−Free Packages are Available MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 24 Vdc Gate−to−Source Voltage − Continuous VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current − Continuous @ TC = 25°C, Chip Continuous @ TC = 25°C, Limited by Package Continuous @ TA = 25°C, Limited by Wires Single Pulse (tp = 10 ms) RqJC PD ID ID ID ID 1.1 113.6 125 120.5 95 250 °C/W W A A A A Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C RqJA PD ID 46 2.72 18.6 °C/W W A Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C RqJA PD ID 63 1.98 15.9 °C/W W A Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk, L = 1 mH, RG = 25 W) EAS 120 mJ Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from Case for 10 Seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 1 inch pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2). PIN ASSIGNMENT PIN FUNCTION 1 Gate 2 Drain 3 Source 4 Drain http://onsemi.com 125 AMPERES, 24 VOLTS RDS(on) = 3.7 mW (Typ) MARKING DIAGRAMS D S G TO−220AB CASE 221A STYLE 5 1 2 3 4 125N2x = Device Code x= R A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 125N2RG AYWW 125N2G AYWW 1 2 3 4 D2PAK CASE 418AA STYLE 2 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION |
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