NTB125N02RT4G datasheet(1/7 Pages) ONSEMI

Part #	NTB125N02RT4G

Description	Power MOSFET 125 A, 24 V N?묬hannel TO??20, D2PAK

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Manufacturer	ONSEMI [ON Semiconductor]

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April, 2006 − Rev. 7

1

Publication Order Number:

NTB125N02R/D

NTB125N02R, NTP125N02R

Power MOSFET

125 A, 24 V N−Channel

TO−220, D2PAK

Features

• Planar HD3e Process for Fast Switching Performance

• Body Diode for Low trr and Qrr and Optimized for Synchronous

Operation

• Low Ciss to Minimize Driver Loss

• Optimized Qgd and RDS(on) for Shoot−through Protection

• Low Gate Charge

• Pb−Free Packages are Available

MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

24

Vdc

Gate−to−Source Voltage − Continuous

VGS

±20

Vdc

Thermal Resistance − Junction−to−Case

Total Power Dissipation @ TC = 25°C

Drain Current −

Continuous @ TC = 25°C, Chip

Continuous @ TC = 25°C, Limited by Package

Continuous @ TA = 25°C, Limited by Wires

Single Pulse (tp = 10 ms)

RqJC

PD

ID

1.1

113.6

125

120.5

95

250

°C/W

W

A

Thermal Resistance −

Junction−to−Ambient (Note 1)

Total Power Dissipation @ TA = 25°C

Drain Current − Continuous @ TA = 25°C

RqJA

PD

ID

46

2.72

18.6

°C/W

W

A

Thermal Resistance −

Junction−to−Ambient (Note 2)

Total Power Dissipation @ TA = 25°C

Drain Current − Continuous @ TA = 25°C

RqJA

PD

ID

63

1.98

15.9

°C/W

W

A

Operating and Storage Temperature Range

TJ, Tstg

−55 to

150

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 50 Vdc, VGS = 10 Vdc, IL = 15.5 Apk,

L = 1 mH, RG = 25 W)

EAS

120

mJ

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from Case for 10 Seconds

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1 inch pad size,

(Cu Area 1.127 in2).

2. When surface mounted to an FR4 board using minimum recommended pad

size, (Cu Area 0.412 in2).

PIN ASSIGNMENT

FUNCTION

1

Gate

2

Drain

3

Source

4

Drain

http://onsemi.com

125 AMPERES, 24 VOLTS

RDS(on) = 3.7 mW (Typ)

MARKING

DIAGRAMS

D

S

G

TO−220AB

CASE 221A

STYLE 5

1

2

3

4

125N2x = Device Code

x= R

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

125N2RG

AYWW

125N2G

AYWW

1

2

3

4

D2PAK

CASE 418AA

STYLE 2

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

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