NTJD4401NT1G datasheet(2/5 Pages) ONSEMI

Part #	NTJD4401NT1G

Description	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection

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NTJD4401N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

20

27

V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

22

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = 16 V

1.0

mA

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = ±12 V

10

mA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

0.6

0.92

1.5

V

Gate Threshold Temperature

Coefficient

VGS(TH)/TJ

-2.1

mV/

°C

Drain-to-Source On Resistance

RDS(on)

VGS = 4.5 V, ID = 0.63 A

0.29

0.375

W

VGS = 2.5 V, ID = 0.40 A

0.36

0.445

Forward Transconductance

gFS

VDS = 4.0 V, ID = 0.63 A

2.0

S

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = 20 V

33

46

pF

Output Capacitance

COSS

13

22

Reverse Transfer Capacitance

CRSS

2.8

5.0

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 10 V,

ID = 0.63 A

1.3

3.0

nC

Threshold Gate Charge

QG(TH)

0.1

Gate-to-Source Charge

QGS

0.2

Gate-to-Drain Charge

QGD

0.4

SWITCHING CHARACTERISTICS (Note 3)

Turn-On Delay Time

td(ON)

VGS = 4.5 V, VDD = 10 V,

ID = 0.5 A, RG = 20 W

0.083

ms

Rise Time

tr

0.227

Turn-Off Delay Time

td(OFF)

0.786

Fall Time

tf

0.506

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS =0.23 A

TJ = 25°C

0.76

1.1

V

TJ = 125°C

0.63

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 0.63 A

0.410

ms

2. Pulse Test: pulse width

≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

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