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FSQ0465RBLDTU Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FSQ0465RBLDTU Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 23 page © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0465RS/RB Rev. 1.0.1 5 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified. Notes: 6. Repetitive peak switching current when inductor load is assumed: limited by maximum duty and maximum junction temperature. 7. 7. L=14mH, starting TJ=25°C. Thermal Impedance TA = 25°C unless otherwise specified. Notes: 8. Free-standing with no heat-sink under natural convection. 9. Infinite cooling condition - refer to the SEMI G30-88. Symbol Parameter Min. Max. Unit Vstr Vstr Pin Voltage 500 V VDS Drain Pin Voltage 650 V VCC Supply Voltage 20 V VFB Feedback Voltage Range -0.3 13.0 V VSync Sync Pin Voltage -0.3 13.0 V IDM Drain Current Pulsed 9.6 A IDSW Continuous Drain Switching Current(6) TC = 25°C 4.0 A EAS Single Pulsed Avalanche Energy(7) 120 mJ PD Total Power Dissipation (TC=25°C) 45 W TJ Operating Junction Temperature Internally limited °C TA Operating Ambient Temperature -25 +85 °C TSTG Storage Temperature -55 +150 °C ESD Human Body Model, JESD22-A114 2.0 kV Charged Device Model, JESD22-C101 2.0 kV Symbol Parameter Package Value Unit θJA Junction-to-Ambient Thermal Resistance(8) TO-220F-6L 50 °C/W θJC Junction-to-Case Thermal Resistance(9) 2.8 °C/W IDS DMAX fSW |
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