tm

November 2007

©2007 Fairchild Semiconductor Corporation

FDP7N50F / FDPF7N50F Rev. A

www.fairchildsemi.com

1

UniFET

TM

FDP7N50F / FDPF7N50F

N-Channel MOSFET, FRFET

500V, 6A, 1.15

Ω

Features

• Low gate charge ( Typ. 15nC)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

Description

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

This advance technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

cient switching mode power supplies and active power factor

correction.

TO-220

FDP Series

G

S

D

TO-220F

FDPF Series

G

S

D

D

G

S

Thermal Characteristics

Symbol

Parameter

FDP7N50F

FDPF7N50F

Units

Drain to Source Voltage

500

V

Gate to Source Voltage

±30

V

Drain Current

6

6*

A

3.6

3.6*

Drain Current

- Pulsed

(Note 1)

24

24*

A

Single Pulsed Avalanche Energy

(Note 2)

270

mJ

Avalanche Current

(Note 1)

6

A

Repetitive Avalanche Energy

(Note 1)

20

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

200

38.5

W

1.59

0.3

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol

Parameter

FDP7N50F

FDPF7N50F

Units

Thermal Resistance, Junction to Case

1.4

4.0

Thermal Resistance, Junction to Ambient

0.5

-

Thermal Resistance, Junction to Ambient

62.5

62.5

*Drain current limited by maximum junction temperature