STB8NM60N datasheet(5/19 Pages) STMICROELECTRONICS

Part #	STB8NM60N

Description	N-channel 600 V, 0.56 廓,7 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK

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STx8NM60N

Electrical characteristics

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Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 300 V, ID = 3.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18),

(see Figure 23)

10

12

40

10

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

7

28

A

VSD

(2)

2.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

ISD = 7 A, VGS = 0

1.3

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7 A, di/dt = 100

A/µs, VDD = 30 V, Tj = 25

°C

(see Figure 20)

310

2.40

15

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7A, di/dt = 100

A/µs, VDD = 30 V,

Tj=150°C

(see Figure 20)

480

3.50

15

ns

µC

A

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