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STP60N3LH5 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP60N3LH5 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 16 page STD60N3LH5, STP60N3LH5, STU60N3LH5 Electrical characteristics Doc ID 14079 Rev 3 5/16 Table 6. Switching on/off (resistive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=10 V, ID= 24 A, RG=4.7 Ω, VGS= 10 V (Figure 13 and Figure 18) - 6 33 - ns ns td(off) tf Turn-off delay time Fall time VDD=10 V, ID= 24 A, RG=4.7 Ω, VGS= 10 V (Figure 13 and Figure 18) - 19 4.2 - ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM Source-drain current Source-drain current (pulsed)(1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% - 48 192 A A VSD Forward on voltage ISD=24 A, VGS=0 - 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=48 A, di/dt =100 A/µs, VDD=20 V, (Figure 15) - 25 18.5 1.5 ns nC A |
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