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BAS70-06 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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BAS70-06 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 1 page BAS70/-04/-05/-06 PRV : 70 Volts Io : 200 mA FEATURES : * These diodes feature very low turn-on voltage * Fast switching * These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges * Pb / RoHS Free MECHANICAL DATA : * Case : SOT-23 plastic Case * BAS70 Marking Code : 73 * BAS70-04 Marking Code : 74 * BAS70-05 Marking Code : 75 * BAS70-06 Marking Code : 76 MAXIMUM RATINGS AND THERMAL CHARACTERISTICS ( Ta = 25 °C, unless otherwise specified) Parameter Symbol Unit Maximum Repetitive Peak Reverse Voltage VRRM V Maximum Working Peak Reverse Voltage VRWM V Maximum DC Blocking Voltage VR V Maximum Forward Continuous Current IF mA Maximum Peak Forward Surge Current at tp < 1 s IFSM mA Total Power Dissipation Ptot mW Thermal Resistance Junction to Ambient Air RӨJA K/W Junction Temperature Range TJ °C Storage Temperature Range TSTG °C ELECTRICAL CHARACTERISTICS (Ta = 25 °C, unless otherwise specified. Parameter Test Condition Symbol Min. Typ. Max. Unit Reverse Breakdown Voltage IR = 10 µA (pulses) V(BR) 70 - - V Leakage Current VR = 50 V IR - 20 100 nA Forward Voltage IF = 1.0 mA VF - - 410 mV (Note 2) IF = 15 mA VF -- 1 V Diode Capacitance VR = 0 V, f = 1 MHz Ctot - 1.5 2 pF Reverse Recovery Time IF = 10 mA , IR = 10 mA, Irr = 1A , RL = 100 Ω Notes : (1) Device on fiberglass substrate (2) Pulse test tp < 300 µs Page 1 of 1 Rev. 01 : May 23, 2006 70 430 (1) -65 to +150 SMALL SIGNAL SCHOTTKY DIODE, SINGLE & DUAL 125 Value 70 200 (1) 600 (1) 200 (1) 70 Trr ns 5 -- 3 1 2 BAS70 3 1 2 BAS70-04 3 1 2 BAS70-05 3 1 2 BAS70-06 3 1 2 1.02 0.89 2.04 1.78 3.10 2.70 Dimensions in millimeters 0.19 0.08 0.50 0.35 0.100 0.013 1.40 0.95 SOT-23 IATF 0060636 SGS TH07/1033 TH09/2479 TH97/2478 |
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