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BYT56M Datasheet(PDF) 2 Page - EIC discrete Semiconductors |
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BYT56M Datasheet(HTML) 2 Page - EIC discrete Semiconductors |
2 / 2 page FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM + NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG.2 - DERATING CURVE FOR OUTPUT FIG.3 - MAXIMUM THERMAL RESISTANCE RECTIFIED CURRENT vs. LEAD LENGTH 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 AMBIENT TEMPERATURE, ( °C) L , Lead Length (mm) FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.5 - REVERSE CURRENT vs. JUNCTION TEMPERATURE 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : October 5, 2005 RATING AND CHARACTERISTIC CURVES ( BAT56A - BAT56M ) 4 3 2 1 5 10 100 10 40 0 50 0 30 20 10 0.1 10 125 0.1 1 1 150 200 25 50 75 100 175 Tj, JUNCTION TEMPERATURE TJ = 25 °C 50 Vdc (approx) D.U.T. OSCILLOSCOPE ( NOTE 1 ) 1 Ω 50 Ω 10 Ω PULSE GENERATOR ( NOTE 2 ) Trr + 0.5 0 - 0.25 - 1.0 A 1 SET TIME BASE FOR 25-35 ns/cm VR = VRRM half sinewave RthJA = 45K/W L = 10 mm L L TL = constant VR = VRRM |
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Similar Description - BYT56M |
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