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BC817-40LT3G Datasheet(PDF) 7 Page - ON Semiconductor |
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BC817-40LT3G Datasheet(HTML) 7 Page - ON Semiconductor |
7 / 10 page BC817−16LT1G, BC817−25LT1G, BC817−40LT1G http://onsemi.com 7 TYPICAL CHARACTERISTICS − BC817−40LT1 Figure 16. DC Current Gain vs. Collector Current Figure 17. Collector Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 0.1 0.01 0.001 0 100 200 300 400 700 1 0.1 0.01 0.001 0.001 0.1 1 Figure 18. Base Emitter Saturation Voltage vs. Collector Current Figure 19. Base Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 1 VCE = 1 V 150°C −55°C 25°C IC/IB = 10 150°C −55°C 25°C 0.4 0.9 IC/IB = 10 150°C −55°C 25°C 0.4 0.7 1.1 VCE = 5 V 150°C −55°C 25°C Figure 20. Current Gain Bandwidth Product vs. Collector Current IC, COLLECTOR CURRENT (mA) 1000 10 1 0.1 10 100 VCE = 1 V TA = 25°C 1000 100 500 600 0.01 |
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