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BCW65ALT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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BCW65ALT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 3 page BCW65ALT1G, BCW65CLT1G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 32 − − Vdc Collector−Emitter Breakdown Voltage (IC = 10 mAdc, VEB = 0) V(BR)CES 60 − − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc Collector Cutoff Current (VCE = 32 Vdc, IE = 0) (VCE = 32 Vdc, IE = 0, TA = 150°C) ICES − − − − 20 20 nAdc mAdc Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO − − 20 nAdc ON CHARACTERISTICS DC Current Gain BCW65ALT1 (IC = 100 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE 35 75 100 35 − − − − − − 250 − − DC Current Gain BCW65CLT1 (IC = 100 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE 80 180 250 100 − − − − − − 630 − − Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) − − 0.7 0.3 − − Vdc Base −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) − − 2.0 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 100 − − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − − 12 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − − 80 pF Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB SWITCHING CHARACTERISTICS Turn−On Time (IB1 = IB2 = 15 mAdc) ton − − 100 ns Turn−Off Time (IC = 150 mAdc, RL = 150 W) toff − − 400 ns |
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