STP90N4F3 datasheet(5/16 Pages) STMICROELECTRONICS

Part #	STP90N4F3

Description	N-channel 40 V, 5.0 m廓, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET??III Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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5 / 16 page

STD90N4F3, STI90N4F3, STP90N4F3, STU90N4F3

Electrical characteristics

Doc ID 14212 Rev 3

5/16

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on delay time

Rise time

VDD=20 V, ID= 40 A,

RG=4.7 Ω, VGS=10 V

(see Figure 16)

-

15

50

-

ns

td(off)

tf

Turn-off delay time

Fall time

VDD=20 V, ID= 40 A,

RG=4.7 Ω, VGS=10 V

(see Figure 16)

-

40

15

-

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

80

320

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD=80 A, VGS=0

-

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=80 A,

di/dt = 100 A/µs,

VDD=30 V, Tj=150°C

(see Figure 15)

-

45

60

2.8

ns

nC

A

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