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BAV199 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BAV199 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 6 page  2007-04-19 1 BAV199... Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Series pair configuration • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAV199 ! , , Type Package Configuration Marking BAV199 SOT23 series JYs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 80 V Peak reverse voltage VRM 85 Forward current IF 200 mA Non-repetitive peak surge forward current t = 1 µs t = 1 s IFSM 4.5 0.5 A Total power dissipation BAV199, TS ≤ 31°C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) BAV199 RthJS ≤ 360 K/W 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance |
Similar Part No. - BAV199_07 |
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Similar Description - BAV199_07 |
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