BAW101_07 datasheet(2/5 Pages) INFINEON

Part #	BAW101

Description	Silicon Switching Diode

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2007-04-20

2

BAW101...

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point1)

BAW101

RthJS

≤ 330

K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Breakdown voltage

I(BR) = 100 µA

V(BR)

300

-

V

Reverse current

VR = 250 V

VR = 250 V, TA = 150 °C

IR

-

0.15

50

µA

Forward voltage

IF = 100 mA

VF

-

1.3

V

AC Characteristics

Diode capacitance

VR = 0 V, f = 1 MHz

CT

-

6

-

pF

Reverse recovery time

IF = 10 mA, IR = 10 mA, measured at IR = 1mA,

RL = 100 Ω

trr

-

1

-

µs

Test circuit for reverse recovery time

EHN00019

Ι

F

D.U.T.

Oscillograph

Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns,

Ri = 50Ω

Oscillograph: R = 50

Ω, tr = 0.35ns, C ≤ 1pF

1For calculation of RthJA please refer to Application Note Thermal Resistance

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BAW101 Datasheet(PDF) 2 Page - Infineon Technologies AG

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