drain

pin 2

gate

pin 1

source

pin 3

600V CoolMOS™ C6 Power Transistor

IPD60R380C6, IPI60R380C6

IPB60R380C6, IPP60R380C6

IPA60R380C6

FinalData Sheet

2

Rev. 2.0, 2009-08-27

1

Description

CoolMOS™ is a revolutionary technology for high voltage power

MOSFETs, designed according to the superjunction (SJ) principle and

pioneered by Infineon Technologies. CoolMOS™ C6 series combines

the experience of the leading SJ MOSFET supplier with high class

innovation. The resulting devices provide all benefits of a fast switching

SJ MOSFET while not sacrificing ease of use. Extremely low switching

and conduction losses make switching applications even more efficient,

more compact, lighter, and cooler.

Features

•

•

Very high commutation ruggedness

•

Easy to use/drive

•

Applications

PFC stages, hard switching PWM stages and resonant switching PWM

stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,

Telecom, UPS and Solar.

Please note: For MOSFET paralleling the use of ferrite beads on the gate

or separate totem poles is generally recommended.

1) J-STD20 and JESD22

2) no PG-To252

Table 1

Key Performance Parameters

Parameter

Value

Unit

V

650

V

0.38



Q

g,typ

32

nC

I

D,pulse

30

A

E

2.8

µJ

Body diode d

500

A/µs

Type / Ordering Code

Package

Marking

Related Links

IPD60R380C6

PG-TO252

IFX C6 Product Brief

IPI60R380C6

PG-TO262

IFX C6 Portfolio

IPB60R380C6

PG-TO263

6R380C6

IFX CoolMOS Webpage

IPP60R380C6

PG-TO220

IFX Design tools

IPA60R380C6

PG-TO220 FullPAK