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SPA21N50C3 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPA21N50C3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 14 page 200 7-08-30 Rev. 3.0 Page 1 SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power Transistor VDS @ Tjmax 560 V RDS(on) 0.19 Ω ID 21 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P G-TO220FP P G-TO262 P G-TO220 1 2 3 Marking 21N50C3 21N50C3 21N50C3 Type Package Ordering Code SPP21N50C3 P G-TO220 Q67040-S4565 SPI21N50C3 P G-TO262 Q67040-S4564 SPA21N50C3 P G-TO220FP SP000216364 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 21 13.1 211) 13.11) A Pulsed drain current, tp limited by Tjmax ID puls 63 63 A Avalanche energy, single pulse ID=10A, VDD=50V EAS 690 690 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=21A, VDD=50V EAR 1 1 Avalanche current, repetitive tAR limited by Tjmax IAR 21 21 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 208 34.5 W SPP_I Operating and storage temperature Tj , Tstg -55...+150 °C Reverse diode dv/dt dv/dt 15 V/ns 7 ) |
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