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SPA12N50C3 Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # SPA12N50C3
Description  New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPA12N50C3 Datasheet(HTML) 4 Page - Infineon Technologies AG

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200
7-08-30
Rev.
3.0
Page 4
SPP12N50
C3
SPI12N50C3, SPA12N50C3
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
IS
TC=25°C
-
-
11.6 A
Inverse diode direct current,
pulsed
ISM
-
-
34.8
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=400V, IF=IS ,
diF/dt=100A/µs
-
380
-
ns
Reverse recovery charge
Qrr
-
5.5
-
µC
Peak reverse recovery current
Irrm
-
38
-
A
Peak rate of fall of reverse
recovery current
dirr/dt
Tj=25°C
-
1100
-
A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPP_I
SPA
SPP_I
SPA
Rth1
0.015
0.15
K/W
Cth1
0.0001878
0.0001878 Ws/K
Rth2
0.03
0.03
Cth2
0.0007106
0.0007106
Rth3
0.056
0.056
Cth3
0.000988
0.000988
Rth4
0.197
0.194
Cth4
0.002791
0.002791
Rth5
0.216
0.413
Cth5
0.007285
0.007401
Rth6
0.083
2.522
Cth6
0.063
0.412
External H eatsink
Tj
Tcase
Tamb
Cth1
Cth2
R th1
Rth,n
Cth,n
Ptot (t)


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